Description of Invention
This study explores the blending of PMMA polymer into TiO₂ to enhance ReRAM device performance. Devices were fabricated using a spin-coated TiO₂-PMMA sol-gel on FTO substrates, followed by annealing and carbon electrode deposition. Electrical characterization showed improved resistive switching, endurance, and retention in polymer-integrated devices. The 3–5% PMMA concentrations demonstrated the best balance of stability and memory retention, indicating strong potential for use in flexible and energy-efficient memory applications.